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File: Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

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D. V. Lebedev, M. M. Kulagina, S. I. Troshkov, A. S. Vlasov, V. Y. Davydov, A. N. Smirnov, A. A. Bogdanov, J. L. Merz, J. Kapaldo, A. Gocalinska, G. Juska, S. T. Moroni, E. Pelucchi, D. Barettin, S. Rouvimov, and A. M. Mintairov

Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ˜2 nm, the lateral size of 20–50 nm, and the density of ˜5x109 cm-2. Their emission observed at ˜940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ˜3.2 lm and providing a free spectral range of ˜27 nm and quality factors up to Q˜13 000. Threshold of ˜50 W/cm2 and spontaneous emission coupling coefficient of ˜0.2 were measured for this MD-QD system.

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